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Vlsi Technology By Sm Sze Ebook Free 35 pagalli



 


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2.7.1.7 Mechanical stress. Despite the foregoing, the silicon is vulnerable to mechanical stress. To avoid this phenomenon, a compressive stress film such as the nitride film can be formed between the silicon and the metal film. Another type of a stress film is a silicon nitride film with the thickness of 0.2–1.0 micron formed on the device surface. This stress film increases the device resistance by 5–10%. 34 35. 2.7.1.8 Overlay. The minimum feature size that can be reliably printed onto a wafer substrate is called the critical dimension or CD. As described in Sze, the CD is defined as the half-width of the smallest Semiconductor Device Physics and Technology.1 August 2000. Semiconductor Devices: Physics and Technology, 2nd ed. 0.2–0.4 μm (or 1 μm) in a photolithographic process. To print a line at a feature size of 0.2–0.4 μm, the CD must be 0.2–0.4 μm. 2.7.1.9 Critical dimension (CD). The CD is the minimum feature size that can be reliably printed onto a wafer substrate. The CD is determined by the exposure Semiconductor Device Physics and Technology.1 August 2000. Semiconductor Devices: Physics and Technology, 2nd ed. or the photolithographic process. The CD has an effect on the line width uniformity (LWU) and line-width tolerance (LWT) of an etched line. For example, if the CD is 0.1 μm, a line with a width of 0.5 μm may be printed onto the substrate. The LWU is the allowable range of variation in the line width across the substrate. The LWU is about 0.1 μm. However, if the CD is 0.2 μm, the line width may be narrower by 0.3 μm or wider by 0.3 μm. The larger LWU and smaller LWT make it easier to print a line with a certain width on the substrate. The LWU, however, will not increase as the CD decreases and the LWT will not decrease as the CD increases. To achieve a good CD in the process, the following steps must be taken: (1) make sure that the exposure equipment has good resolution, and (2) make sure that the exposure

 

 

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